BSS139 데이터 시트보기 (PDF) - Infineon Technologies
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BSS139 Datasheet PDF : 9 Pages
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13 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
1
150 °C, 98%
0.1
25 °C
150 °C
25 °C, 98%
15 Typ. gate charge
V GS=f(Q gate); I D=0.1 A pulsed
parameter: V DD
8
BSS139
6
0.2 VDS(max) 0.5 VDS(max)
4
0.8 VDS(max)
2
0.01
0
-2
0.001
-4
0
0.4
0.8
1.2
1.6
0
1
2
3
V SD [V]
Q gate [nC]
16 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=250 µA
300
280
260
240
220
-60 -20
20
60 100 140 180
T j [°C]
Rev. 1.7
page 7
2009-08-18
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