BSP324(2003) 데이터 시트보기 (PDF) - Infineon Technologies

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BSP324
(Rev.:2003)

SIPMOS® Power-Transistor

Infineon Technologies 

Rev. 1.0

BSP324

13 Typ. gate charge

VGS = f (QG); parameter: VDS ,

ID = 0.17 A pulsed, Tj = 25 °C

BSP324

16

V

12

10

0.2 VDS max

8 0.5 VDS max

0.8 VDS max

6

4

2

0

0

1

2

3

4

5 nC

7

QG

14 Drain-source breakdown voltage

V(BR)DSS = f (Tj)

490 BSP324

V

470

460

450

440

430

420

410

400

390

380

370

360

-60 -20

20

60 100 °C

180

Tj

Page 7

2003-02-21

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