BSP321P(2009) 데이터 시트보기 (PDF) - Infineon Technologies
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BSP321P Datasheet PDF : 9 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=-0.98 A; V GS=-10 V
2.5
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS; I D=-380 µA
BSP321P
5
2
1.5
98 %
1
0.5
typ.
min.
4
typ.
3
max.
2
0
-60
-20
20
60
100 140
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
103
1
-60
-20
20
60
100 140
T j [°C]
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
101
Ciss
102
Coss
100
10-1
101
0
Rev 1.03
Crss
20
40
60
80
100
-V DS [V]
10-2
0
page 6
150 °C, typ
25 °C, typ
150 °C, 98%
25 °C, 98%
0.5
1
-V SD [V]
1.5
2009-02-16
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