BSP92P(2002) 데이터 시트보기 (PDF) - Infineon Technologies

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BSP92P
(Rev.:2002)

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

Preliminary data

BSP 92 P

Thermal Characteristics

Parameter

Characteristics

Thermal resistance, junction - soldering point

(Pin 4)

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 1)

Symbol

Values

Unit

min. typ. max.

RthJS

RthJA

-

15 25 K/W

-

80 115

-

48 70

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

V(BR)DSS -250

-

-V

VGS=0, ID=-250µA

Gate threshold voltage, VGS = VDS

ID =-130µA

Zero gate voltage drain current

VDS=-250V, VGS=0, Tj=25°C

VDS=-250V, VGS=0, Tj=150°C

Gate-source leakage current

VGS=-20V, VDS=0

Drain-source on-state resistance

VGS=-2.8V, ID=-0.025A

Drain-source on-state resistance

VGS=-4.5V, ID=-0.23A

Drain-source on-state resistance

VGS=-10V, ID=-0.26A

VGS(th)

-1 -1.5 -2

IDSS

IGSS

µA

- -0.1 -0.2

-

-10 -100

-

-10 -100 nA

RDS(on)

-

10 20 Ω

RDS(on)

-

8.2 15

RDS(on)

-

7.5 12

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Page 2

2002-07-25

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