Philips Semiconductors
UHF linear power transistor
Product specification
BLW898
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
IC(AV)
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
operating junction temperature
open emitter
open base
open collector
up to Tmb = 70 °C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
Rth mb-h
PARAMETER
thermal resistance from junction to
mounting-base
thermal resistance from
mounting-base to heatsink
CONDITIONS
Ptot = 44 W; Tmb = 70 °C
MIN.
−
−
−
−
−
−
−65
−
MAX.
60
28
2.5
3.7
3.7
44
+150
200
UNIT
V
V
V
A
A
W
°C
°C
VALUE
3
0.3
UNIT
K/W
K/W
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Ptot
(W)
80
(2)
(1)
40
MGD531
0
0
40
80
120
160
Tmb °C
(1) Continuous operation
(2) Short-time operation during mismatch.
Fig.2 Power derating curve.
1996 Jul 16
3