Philips Semiconductors
UHF linear power transistor
Product specification
BLW898
FEATURES
• Internal input matching for wideband operation and high
power gain
• Polysilicon emitter ballasting resistors for an optimum
temperature profile
• Gold metallization ensures excellent reliability.
APPLICATION
• Common emitter class-A operation in linear
transposers/transmitters (television) in the
470 to 860 MHz frequency band.
DESCRIPTION
NPN silicon planar transistor in a SOT171A 6-lead
rectangular flange package, with a ceramic cap. The
transistor delivers a Po sync = 3 W in class-A operation at
860 MHz and a supply voltage of 25 V.
PINNING SOT171A
PIN
DESCRIPTION
1
emitter
2
emitter
3
base
4
collector
5
emitter
6
emitter
handbook, halfpage 2 4 6
c
b
135
Top view
e
MAM141
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter test circuit.
MODE OF
f
VCE
ICQ
OPERATION
(MHz)
(V)
(A)
CW class-A
860
25
1.1
Note
1. Three-tone test signal (−8, −16, and −10 dB); dim = −63 dB.
Po sync
(W)
≥3(1)
Gp
(dB)
≥9(1)
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Jul 16
2