BFG505 데이터 시트보기 (PDF) - NXP Semiconductors.
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BFG505 Datasheet PDF : 13 Pages
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NXP Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG505; BFG505/X
25
handbook, halfpage
gain
(dB)
20
MSG
15
GUM
10
MRA643
Gmax
5
0
0
4
8
12
IC (mA)
VCE = 6 V; f = 2 GHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
Fig.7 Gain as a function of collector current.
handbook,5h0alfpage
gain
GUM
(dB)
40
MRA644
30
MSG
20
10
0
10
102
103
104
f (MHz)
VCE = 6 V; IC = 1.25 mA.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
Fig.8 Gain as a function of frequency.
50
handbook, halfpage
gain
GUM
(dB)
40
MSG
30
MRA645
20
Gmax
10
0
10
102
103
104
f (MHz)
VCE = 6 V; IC = 5 mA.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
Fig.9 Gain as a function of frequency.
5
handbook, halfpage
Fmin
(dB)
4
3
MRA650
20
f = 900 MHz Gass
(dB)
15
1000 MHz
Gass
2000 MHz
10
2
2000 MHz
5
1000 MHz
Fmin
900 MHz
1
500 MHz
0
0
10−1
−5
1
IC (mA)
10
VCE = 6 V.
Fig.10 Minimum noise figure and associated
available gain as functions of collector
current.
Rev. 04 - 22 November 2007
6 of 13
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