datasheetbank_Logo
전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

BD6761FS-E2 데이터 시트보기 (PDF) - ROHM Semiconductor

부품명
상세내역
제조사
BD6761FS-E2 Datasheet PDF : 23 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
BD6761FS,BD6762FV
Technical Note
Selecting application components
Design method
Output FET
This IC is the predriver for high-side and low-side N-channel
MOS FET drive. Select the FET with the required current
capacity to drive the motor.
Diodes (BD67861FS)
Diodes are required to protect between the gate and source of
output FET.
Protection capacitor between the output FET drain and source
Check the operation so that the voltage between the output FET
drain and source does not exceed the absolute maximum
ratings due to the fluctuation of VCC at the time of PWM driving
and then set the value.
VB current capacitance capacitor
Current capacity from VG changes according to the capacitance
to be connected. However, if the capacitance is too large, the
following action is delayed when VCC starts up, and the
magnitude relation becomes VCC > VG which should be VCC <
VG usually and the large current may flow in internal block
circuits and result in damaging the circuits. When VG is directly
supplied from the external block without using the internal
circuits, disconnect the capacitor between CP1 and CP2, and
connect the 20kresistor (for noise reduction) between CP1
and ground to use.
PWM frequency
PWM frequency can be adjusted by the capacitance and
resistance to connect. When the frequency is high, the heat
generation increases due to switching loss. When the frequency
is low, it enters audible range. Check the operation with the
actual product and determine the constant.
Hall input level
The current value to feed to the hall element changes by
changing the resistance and the amplitude level of hall element
can be adjusted.
Amplitude level increases when the resistance value is chosen
smaller by considering the noise affect, but pay attention also to
the hall input voltage range. BD6761FS (1.5V to 4.1V) and
BD6762FV (0V to 3V)
VREG
VREG which is the internal voltage output pin drives the circuits
in IC. Connect the capacitor to stabilize it.
Current limit
The current flowing to FET can be controlled by setting the
resistance value. Determine the constant according to the motor
specifications.
Hall input noise
Insert capacitors between the hall phases in order to eliminate
the hall input noise due to the effect by the pattern routing
design.
CL (RF) voltage smoothing low pass filter
Smooth the CL (RF) voltage which has PWM noise through the
low pass filter.
FG AMP constant setting
FG AMP gain: GFG is the ratio of R1 and R2 calculated by the
following equation.
GFG=20log R2/R1 [dB]
Set up the gain so that the FGOUT amplitude is large enough to
the hysteresis level of the hysteresis comparator and it cannot
be clamped by the high and low output voltages
(VFGOH and VFGOL).
Design example
Recommended FET RDS035L03 (A)
Recommended diode 1SS355
Insert the diode in the direction from high-side
FET source to the gate side (in the forward direction).
A value of 0.01μ to 0.1μF is recommended.
A value of 0.1μF is appropriate for the capacitance.
Insert the capacitor between the output FET drain and
source. (Position at the close point to FET as much as
possible.)
A value of 0.01μF is appropriate for the capacitor
between CP1 and CP2
(A value of 0.01μF 0.1μF is recommended.)
A value of 0.1μF is appropriate for the capacitor
between VG and VCC.
The following constants are appropriate.
BD6761FS Cfe=1000pF, Rfe=50k, fo=16.5kHz(TYP.)
BD6762FV Cfe=1000pF, Rfe=20k, fo=16.0kHz(TYP.)
Connect to the transistor base via 1kresistor (base
current limit) from the VREG pin. Connect the transistor
collector to VCC, the emitter to the hall element via R1.
Connect the ground side of hall element to the ground
via R2.
A value of 200to 1kis recommended. A value of
200is appropriate, respectively. When connecting to
the VCC side directly with R1, values of R1=5kand
R2=2kare appropriate.
A value of 0.01μF to 0.1μF is recommended. A value of
0.1μ is appropriate.
Following equation shows the current value.
BD6761FS Iomax=0.48/RNF [A]
BD6762FV Iomax=0.26/RNF [A]
A value of 0.01μF is appropriate for the capacitor to be
installed between the hall phases.
A value of 0.01μF to 0.1μF is recommended.
A value of C = 470pF and R=1kis appropriate for the
low pass filter.
For the external constant, since the impedance is high,
make sure to design the pattern with the shortest circuit
route so that the circuit is hard to be affected by noise.
R1 and C1 form a high pass filter and R2 and C2 form a
low pass filter. Each cut off frequency; fMPF and fLPF
is determined by the following equation.
fMPF=1/2πR1C1, fLPF=1/2πR2C2
Set the value so that the main signal from PG by the
motor is not attenuated but the unnecessary noise can
be attenuated.
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
18/22
2010.06 - Rev.A

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]