BD434S 데이터 시트보기 (PDF) - Fairchild Semiconductor
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BD434S Datasheet PDF : 8 Pages
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BD434/436/438
Medium Power Linear and Switching
Applications
• Complement to BD433, BD435 and BD437 respectively
1
TO-126
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BD434
: BD436
: BD438
VCES
Collector-Emitter Voltage
: BD434
: BD436
: BD438
VCEO
Collector-Emitter Voltage
: BD434
: BD436
: BD438
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
- 22
- 32
- 45
- 22
- 32
- 45
- 22
- 32
- 45
-5
-4
-7
-1
36
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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