BD165 데이터 시트보기 (PDF) - Motorola => Freescale
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BD165 Datasheet PDF : 4 Pages
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BD165 BD169
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. PD – TC Derating Curve
10
TJ = 150°C
5.0
3.0
2.0
100 µs
1.0 ms
5.0 ms
1.0
SECOND BREAKDOWN
0.5
LIMITED
dc
BONDING WIRE LIMITED
0.3
THERMAL LIMITATION @ TC = 25°C
0.2
PULSE CURVES APPLY BELOW
RATED VCEO
BD165
BD169
0.1
5.0 7.0 10
20 30
50
70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 2. Safe Operating Area (see Note 1)
1.2
1
0.8
IC = 0.1 A
0.25 A
0.5 A
1A
0.6
0.4
0.2
0
1
5
10
50
100
500
1000
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
10
TJ = + 150°C
+ 25°C
– 25°C
1
0.5
VBE(sat) at IC/IB = 10
VBE at VCE = 2 V
1
VCE = 2 V
0.1
0.05
TJ = 25°C
VCE(sat) at IC/IB = 10
0.1
0.01
0.05
0.1
0.5
1
IC, COLLECTOR CURRENT (A)
Figure 4. Current Gain
Note 1:
There are two limitations on the power handling ability of a
transistor; average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
2
0.01
10
50
100
500 1000
IC, COLLECTOR CURRENT (mA)
Figure 5. “On” Voltage
The data of Figure 2 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
vlimits are valid for duty cycles to 10% provided TJ(pk)
150_C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Motorola Bipolar Power Transistor Device Data
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