BCW61B 데이터 시트보기 (PDF) - NXP Semiconductors.
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BCW61B Datasheet PDF : 6 Pages
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NXP Semiconductors
PNP general purpose transistors
Product data sheet
BCW61 series
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 32 V).
APPLICATIONS
• General purpose switching and amplification.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complement: BCW60.
MARKING
TYPE NUMBER
BCW61B
BCW61C
BCW61D
MARKING CODE(1)
BB∗
BC∗
BD∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
handbook, halfpage
3
3
1
1
Top view
2
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−32
−32
−5
−100
−200
−100
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 12
2
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