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BCP56
(Rev.:2011)

MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

ON Semiconductor 

BCP56 Series,

SBCP56 Series

NPN Silicon

Epitaxial Transistor

These NPN Silicon Epitaxial transistors are designed for use in

audio amplifier applications. The device is housed in the SOT−223

package, which is designed for medium power surface mount

applications.

Features

• High Current: 1.0 A

• The SOT−223 package can be soldered using wave or reflow. The

formed leads absorb thermal stress during soldering, eliminating the

possibility of damage to the die

• Available in 12 mm Tape and Reel

Use BCP56T1 to Order the 7 inch/1000 Unit Reel

Use BCP56T3 to Order the 13 inch/4000 Unit Reel

• PNP Complement is BCP53T1

• AEC−Q101 Qualified and PPAP Capable

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current

Total Power Dissipation

@ TA = 25°C (Note 1)

Derate above 25°C

VCEO

VCBO

VEBO

IC

PD

80

Vdc

100

Vdc

5

Vdc

1

Adc

1.5

W

12

mW/°C

Operating and Storage

Temperature Range

TJ, Tstg − 65 to 150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction−to−Ambient

(surface mounted)

RqJA

83.3

°C/W

Maximum Temperature for

Soldering Purposes

Time in Solder Bath

TL

260

°C

10

Sec

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x

1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.

http://onsemi.com

MEDIUM POWER NPN SILICON

HIGH CURRENT TRANSISTOR

SURFACE MOUNT

COLLECTOR 2,4

BASE

1

EMITTER 3

4

1

2

3

SOT−223

CASE 318E

STYLE 1

MARKING DIAGRAM

AYW

xxxxxG

G

1

xx

= Specific Device Code

A

= Assembly Location

Y

= Year

W

= Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

© Semiconductor Components Industries, LLC, 2011

1

November, 2011 − Rev. 8

Publication Order Number:

BCP56T1/D

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