BC847M 데이터 시트보기 (PDF) - Philips Electronics

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BC847M

NPN general purpose transistors

Philips Electronics 

Philips Semiconductors

NPN general purpose transistors

Product specification

BC847M series

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

SYMBOL

PARAMETER

VCBO

VCEO

VEBO

IC

ICM

IBM

Ptot

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

peak collector current

peak base current

total power dissipation

Tstg

Tj

Tamb

storage temperature

junction temperature

operating ambient temperature

CONDITIONS

open emitter

open base

open collector

Tamb ≤ 25 °C

note 1

note 2

MIN.

−

−

−

−

−

−

MAX.

50

45

5

100

200

100

UNIT

V

V

V

mA

mA

mA

−

250

mW

−

430

mW

−65

+150

°C

−

150

°C

−65

+150

°C

Notes

1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper stripline.

2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth(j-a)

thermal resistance from junction to ambient in free air

note 1

note 2

VALUE

500

290

UNIT

K/W

K/W

Notes

1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper stripline.

2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2.

2004 Mar 10

3

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