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BC394CSM

HIGH VOLTAGE NPN AMPLIFIER TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

Semelab - > TT Electronics plc  

BC394CSM

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)

Parameter

Test Conditions

Min.

V(BR)CBO Collector – Base Breakdown Voltage IC = 100µA

180

V(BR)CEO* Collector - Emitter Breakdown Voltage IC = 10mA IB = 0

180

V(BR)EBO Emitter – Base Breakdown Voltage

IE = 100µA IC = 0

6

ICBO

Collector Cut-off Current

VCBO = 100V

IE = 0

TA = 150°C

VCE(sat)*

Collector – Emitter Saturation Voltage IC = 10mA

IC = 50mA

IB = 1mA

IB = 5mA

VBE(sat)* Base – Emitter Saturation Voltage

IC = 10mA

IC = 50mA

IB = 1mA

IB = 5mA

hFE*

DC Current Gain

IC = 1mA

VCE = 10V

IC = 10mA VCE = 10V

30

fT

Transition Frequency

IC = 10mA VCE = 10V

50

CCBO

Capacitor- Base Capacitance

VCB = 10V

f = 1.0MHz

IE = 0

Typ.

200

400

750

850

85

100

95

5

Max.

50

50

300

Unit

V

V

V

nA

µA

mV

900

mV

—

MHz

pF

* Pulse Test: tp = 300µs, δ ≤ 1%.

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 9/96

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