NXP Semiconductors
BAP51LX
Silicon PIN diode
0
ISL
(dB)
−10
001aag635
−20
−30
−40
0
1000
2000
3000
f (MHz)
Tamb = 25 °C
Diode zero biased and inserted in series with a 50 Ω
stripline circuit
Fig 3. Isolation of the diode as a function of
frequency; typical values
0
Lins
(dB)
−0.2
−0.4
001aag636
(1)
(2)
(3)
(4)
−0.6
−0.8
−1.0
0
1000
2000
3000
f (MHz)
Tamb = 25 °C
(1) IF = 100 mA
(2) IF = 10 mA
(3) IF = 1 mA
(4) IF = 0.5 mA
Diode inserted in series with a 50 Ω stripline circuit
and biased via the analyzer Tee network
Fig 4. Insertion loss of the diode as a function of
frequency; typical values
BAP51LX_1
Product data sheet
Rev. 01 — 26 June 2007
© NXP B.V. 2007. All rights reserved.
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