BAQ133(2005) 데이터 시트보기 (PDF) - Vishay Semiconductors
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BAQ133 Datasheet PDF : 5 Pages
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BAQ133 / 134 / 135
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
IF = 100 mA
VF
1
V
E ≤ 300 lx, rated VR
IR
1
3
nA
E ≤ 300 lx, rated VR, Tj = 125 °C
IR
0.5
μA
E ≤ 300 lx, VR = 15 V
BAQ133
IR
0.5
1
nA
E ≤ 300 lx, VR = 30 V
BAQ134
IR
0.5
1
nA
E ≤ 300 lx, VR = 60 V
BAQ135
IR
0.5
1
nA
IR = 5 μA, tp/T = 0.01, tp = 0.3 ms BAQ133 V(BR)
40
V
BAQ134 V(BR)
70
V
BAQ135 V(BR)
140
V
VR = 0, f = 1 MHz
CD
3
pF
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
10000
VR = VRRM
1000
Scattering Limit
100
10
1
0
40
80 120 160 200
94 9079
Tj - Junction Temperature (°C)
Figure 1. Reverse Current vs. Junction Temperature
1000
Tj = 25 °C
100
10
Scattering Limit
1
0.1
0
94 9078
0.4 0.8 1.2 1.6 2.0
VF - Forward Voltage (V)
Figure 2. Forward Current vs. Forward Voltage
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2
Document Number 85536
Rev. 1.7, 09-Dec-05
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