AT-42036 데이터 시트보기 (PDF) - HP => Agilent Technologies

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AT-42036

Up to 6 GHz Medium Power Silicon Bipolar Transistor

HP => Agilent Technologies 

AT-42036 Absolute Maximum Ratings[1]

Symbol

Parameter

Units

Absolute Maximum

VEBO

Emitter-Base Voltage

V

1.5

VCBO

Collector-Base Voltage

V

20

VCEO

Collector-Emitter Voltage

V

12

IC

Collector Current

mA

80

PT

Power Dissipation[2,3]

mW

600

Tj

Junction Temperature

°C

150

TSTG

Storage Temperature[4]

°C

-65 to 150

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. TCASE = 25°C.

3. Derate at 5.7 mW/°C for TC > 95°C.

4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a

circuit.

5. The small spot size of this technique results in a higher, though more accurate determination of

θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more

information.

Thermal Resistance[2,5]:

θjc = 175°C/W

Electrical Specifications

TA = 25°C

Symbol Parameters and Test Conditions[1]

Frequency

|S21E|2

Insertion Power Gain; VCE = 8 V, IC = 35 mA

f = 2.0 GHz

f = 4.0 GHz

P1 dB

G1 dB

Power Output @ 1 dB Gain Compression

VCE = 8 V, IC = 35 mA

1 dB Compressed Gain; VCE = 8 V, IC = 35 mA

f = 2.0 GHz

f = 4.0 GHz

f = 2.0 GHz

f = 4.0 GHz

NFO

Optimum Noise Figure: VCE = 8 V, IC = 10 mA

f = 2.0 GHz

f = 4.0 GHz

GA

Gain @ NFO; VCE = 8 V, IC = 10 mA

f = 2.0 GHz

f = 4.0 GHz

fT

Gain Bandwidth Product: VCE = 8 V, IC = 35 mA

hFE

Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA

ICBO

Collector Cutoff Current; VCB = 8 V

IEBO

Emitter Cutoff Current; VEB = 1 V

CCB

Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz

Note:

1. For this test, the emitter is grounded.

Units

Min.

Typ.

dB

10.0

11.0

5.0

dBm

21.0

20.5

dB

14.0

9.5

dB

2.0

3.0

dB

13.5

10.0

GHz

8.0

—

30

150

µA

µA

pF

0.28

Max.

270

0.2

2.0

2

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