AOD410L 데이터 시트보기 (PDF) - Alpha and Omega Semiconductor
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AOD410L Datasheet PDF : 4 Pages
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AOD410, AOD410L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
IDSS
Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
TJ=55°C
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
10
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=8A
TJ=125°C
VGS=4.5V, ID=2A
gFS
Forward Transconductance
VDS=5V, ID=8A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=10V, VDS=15V, ID=8A
tr
tD(off)
tf
trr
Qrr
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
IF=8A, dI/dt=100A/µs
IF=8A, dI/dt=100A/µs
Typ
1.8
48
76
75
6.2
0.75
288
57
39
3
6.72
3.34
0.76
1.78
3.7
3.7
15.6
2.6
12.6
5.1
Max Units
V
1
µA
5
100 nA
3
V
A
65
mΩ
100
105 mΩ
S
1
V
4.3
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends on the
user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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