AO8801 데이터 시트보기 (PDF) - Unspecified

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AO8801

Dual P-Channel Enhancement Mode Field Effect Transistor

Unspecified 

AO8801

Dual P-Channel Enhancement Mode Field

Effect Transistor

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=-250µA, VGS=0V

-20

IDSS

Zero Gate Voltage Drain Current

VDS=-16V, VGS=0V

TJ=55°C

IGSS

Gate-Body leakage current

VDS=0V, VGS=±4.5V

VDS=0V, VGS=±8V

VGS(th) Gate Threshold Voltage

VDS=VGS ID=-250µA

-0.3

ID(ON)

On state drain current

VGS=-4.5V, VDS=-5V

-25

VGS=-4.5V, ID=-4.7A

RDS(ON) Static Drain-Source On-Resistance

VGS=-2.5V, ID=-4A

TJ=125°C

VGS=-1.8V, ID=-2A

gFS

Forward Transconductance

VDS=-5V, ID=-4.7A

8

VSD

Diode Forward Voltage

IS=-1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=-10V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

Qg

Total Gate Charge

Qgs

Gate Source Charge

VGS=-4.5V, VDS=-10V, ID=-4A

Qgd

Gate Drain Charge

tD(on)

Turn-On Delay Time

tr

Turn-On Rise Time

VGS=-4.5V, VDS=-10V, RL=2.5Ω,

tD(off)

Turn-Off Delay Time

RGEN=3Ω

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/µs

Qrr

Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs

Typ

-0.55

35

47

44

54

16

-0.78

1450

205

160

6.5

17.2

1.3

4.5

9.5

17

94

35

31

13.8

Max Units

V

-1

µA

-5

±1

µA

±10 µA

-1

A

42

mΩ

57

53 mΩ

70 mΩ

S

-1

V

-2.2 A

pF

pF

pF

Ω

nC

nC

nC

ns

ns

ns

ns

ns

nC

A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

SOA curve provides a single pulse rating.

2/4

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