AOB436 데이터 시트보기 (PDF) - Alpha and Omega Semiconductor
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AOB436 Datasheet PDF : 5 Pages
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AOB436
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOB436 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
product AOB436 is Pb-free (meets ROHS & Sony
259 specifications). AOB436L is a Green Product
ordering option. AOB436 and AOB436L are
electrically identical.
TO-263
D2-PAK
Features
VDS (V) = 25V
ID = 55A (VGS = 10V)
RDS(ON) < 7 mΩ (VGS = 10V)
RDS(ON) < 11 mΩ (VGS = 4.5V)
193
18
D
Top View
Drain Connected to
Tab
G
S
GD S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
ID
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
Repetitive avalanche energy L=0.1mH C
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
25
±20
55
55
150
30
45
50
25
3
2.1
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
10
41
15
50
Maximum Junction-to-Case B
Steady-State
RθJC
1.9
3
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
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