AO4915L 데이터 시트보기 (PDF) - Alpha and Omega Semiconductor

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AO4915L

low voltage P channel process 8 lead SOIC

Alpha and Omega Semiconductor 

IV. Reliability Evaluation

FIT rate (per billion):

MTTF = years

500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of lifetime at

55 deg C operating conditions (by applying the Arrhenius equation with an activation energy

of 0.7eV and 60% of upper confidence level on the failure rate calculation). AOS reliability

group also routinely monitors the product reliability up to 1000 hr at and performs the

necessary failure analysis on the units failed for reliability test(s).

The presentation of FIT rate for the individual product reliability is restricted by the actual

burn-in sample size of the selected product (AO4915). Failure Rate Determination is based

on JEDEC Standard JESD 85. FIT means one failure per billion hours.

Failure Rate = Chi2 x 109 / [2 (N) (H) (Af)] = 1.83 x 109 / [2 (164) (168) (258)] =

MTBF = 109 / FIT = x 107hrs = years

Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval

N = Total Number of units from HTRB and HTGB tests

H = Duration of HTRB/HTGB testing

Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55C)

Acceleration Factor [Af] = Exp [Ea / k ( 1/Tj u – 1/Tj s )]

Acceleration Factor ratio list:

55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C

Af

258

87

32

13

5.64

2.59

1

Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16

Tj u = The use junction temperature in degree (Kelvin), K = C+273.16

k = Boltznan’s constant, 8.617164 X 10E-5V / K

V. Quality Assurance Information

Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual.

Guaranteed Outgoing Defect Rate: < 25 ppm

Quality Sample Plan: conform to Mil-Std-105D

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