AO6403(2011) 데이터 시트보기 (PDF) - Alpha and Omega Semiconductor
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AO6403 Datasheet PDF : 5 Pages
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AO6403
30V P-Channel MOSFET
General Description
Product Summary
The AO6403 uses advanced trench technology to provide
excellent RDS(ON), and ultra-low low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
VDS
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
RDS(ON) (at VGS = -4.5V)
-30V
-6A
< 35mΩ
< 58mΩ
TSOP6
D
Top View
Bottom View
Top View
Pin1
D1
D2
G3
6
D
5
D
4
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
TA=25°C
TA=70°C
ID
Pulsed Drain Current C
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-30
±20
-6
-5
-30
2
1.3
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
47.5
74
37
Max
62.5
110
50
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 4: Nov 2011
www.aosmd.com
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