L800BB80V 데이터 시트보기 (PDF) - Advanced Micro Devices

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L800BB80V

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

Advanced Micro Devices 

TEST CONDITIONS

3.3 V

Device

Under

Test

CL

6.2 kΩ

2.7 kΩ

Note: Diodes are IN3064 or equivalent

Figure 11. Test Setup

21490G-14

Table 7. Test Specifications

Test Condition

70,

90,

80

120 Unit

Output Load

1 TTL gate

Output Load Capacitance, CL

(including jig capacitance)

30

100

pF

Input Rise and Fall Times

5

ns

Input Pulse Levels

0.0–3.0

V

Input timing measurement

reference levels

1.5

V

Output timing measurement

reference levels

1.5

V

KEY TO SWITCHING WAVEFORMS

WAVEFORM

INPUTS

Steady

OUTPUTS

Changing from H to L

Changing from L to H

Don’t Care, Any Change Permitted

Changing, State Unknown

Does Not Apply

Center Line is High Impedance State (High Z)

KS000010-PAL

3.0 V

0.0 V

Input

1.5 V

Measurement Level

1.5 V

Figure 12. Input Waveforms and Measurement Levels

Output

21490G-15

26

Am29LV800B

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