IS62LV2568ALL-85H 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS62LV2568ALL-85H

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

Integrated Silicon Solution 

IS62LV2568ALL

TRUTH TABLE

Mode

WE

Not Selected X

(Power-down) X

Output Disabled H

Read

H

Write

L

CE1 CE2 OE

H

XX

X

LX

L

HH

L

HL

L

HX

I/O Operation

High-Z

High-Z

High-Z

DOUT

DIN

Vcc Current

ISB1, ISB2

ISB1, ISB2

ICC

ICC

ICC

ISSI ®

OPERATING RANGE

Range

Commercial

Industrial

Ambient Temperature

0°C to +70°C

–40°C to +85°C

VCC MIN.

2.5V

2.5V

VCC MAX.

3.3V

3.3V

ABSOLUTE MAXIMUM RATINGS(1)

Symbol Parameter

Value

Unit

VTERM Terminal Voltage with Respect to GND –0.5 to Vcc + 0.5 V

VCC

Vcc related to GND

–0.3 to +3.6

V

TBIAS

Temperature Under Bias

–40 to +85

°C

TSTG

Storage Temperature

–65 to +150

°C

PT

Power Dissipation

0.7

W

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation of the

device at these or any other conditions above those indicated in the operational sections of

this specification is not implied. Exposure to absolute maximum rating conditions for

extended periods may affect reliability.

CAPACITANCE(1,2)

Symbol Parameter

Conditions

Max.

CIN

Input Capacitance

VIN = 0V

6

COUT

Output Capacitance

VOUT = 0V

8

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.0V.

Unit

pF

pF

Integrated Silicon Solution, Inc. — 1-800-379-4774

3

Rev. B

08/01/01

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