ADP3121(2009) 데이터 시트보기 (PDF) - ON Semiconductor
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ADP3121 Datasheet PDF : 10 Pages
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ADP3121
ELECTRICAL CHARACTERISTICS (VCC = 12 V, BST = 4 V to 26 V, TA = 0°C to 85°C, unless otherwise noted) (Note 5)
Characteristic
Test Conditions
Symbol
Min
Typ
Max
SUPPLY
Supply Voltage Range
Supply Current
OD INPUTS
BST = 12 V, IN = 0 V
VCC
ISYS
4.15
13.2
2
5
Input Voltage High
2.0
Input Voltage Low
0.8
Input Current
−1
+1
Hysteresis
90
250
PWM INPUTS
Input Voltage High
2.0
Input Voltage Low
0.8
Input Current
−1
+1
Hysteresis
90
250
HIGH−SIDE DRIVER
Output Resistance, Sourcing Current
Output Resistance, Sinking Current
Output Resistance, Unbiased
BST − SW = 12 V; TA = 25°C
BST − SW = 12 V; TA = 0°C to 85°C
BST – SW = 12 V; TA = 25°C
BST − SW = 12 V; TA = 0°C to 85°C
BST – SW = 0 V
2.3
1.7
2.8
2.3
1.7
2.8
10
Transition Times
BST – SW = 12 V, CLOAD = 3 nF,
see Figure 4
trDRVH
20
32
BST – SW = 12 V, CLOAD = 3 nF,
see Figure 4
tfDRVH
20
30
Propagation Delay Times
BST – SW = 12 V, CLOAD = 3 nF tpdhDRVH
20
30
50
25°C ≤ TA ≤ 85°C, see Figure 4
BST – SW = 12 V, CLOAD = 3 nF,
see Figure 4
tpdlDRVH
32
47
SW Pull−Down Resistance
See Figure 3
See Figure 3
SW to PGND
tpdlOD
tpdhOD
30
45
20
40
10
LOW−SIDE DRIVER
Output Resistance, Sourcing Current
TA = 25°C
2.4
TA = 0°C to 85°C
1.8
2.8
Output Resistance, Sinking Current
TA = 25°C
1.6
TA = 0°C to 85°C
1.0
1.8
Output Resistance, Unbiased
VCC = PGND
10
Transition Times
CLOAD = 3 nF, see Figure 4
trDRVL
20
30
CLOAD = 3 nF, see Figure 4
tfDRVL
10
20
Propagation Delay Times
CLOAD = 3 nF, see Figure 4
tpdhDRVL
15
35
CLOAD = 3 nF, see Figure 4
tpdlDRVL
17
32
See Figure 3
tpdlOD
37
52
See Figure 3
tpdhOD
100
180
5. ALL limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC) methods
Unit
V
mA
V
V
mA
mV
V
V
mA
mV
W
W
W
W
kW
ns
ns
ns
ns
ns
ns
kW
W
W
W
W
kW
ns
ns
ns
ns
ns
ns
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