74LVC1GU04GW 데이터 시트보기 (PDF) - NXP Semiconductors.

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74LVC1GU04GW

Inverter

NXP Semiconductors. 

Philips Semiconductors

Inverter

Product specification

74LVC1GU04

FEATURES

• Wide supply voltage range from 1.65 V to 5.5 V

• High noise immunity

• ±24 mA output drive (VCC = 3.0 V)

• CMOS low power consumption

• Latch-up performance exceeds 250 mA

• Input accepts voltages up to 5 V

• Multiple package options

• ESD protection:

– HBM EIA/JESD22-A114-B exceeds 2000 V

– MM EIA/JESD22-A115-A exceeds 200 V.

• Specified from −40 °C to +85 °C and −40 °C to +125 °C.

DESCRIPTION

The 74LVC1GU04 is a high-performance, low-power,

low-voltage, Si-gate CMOS device, superior to most

advanced CMOS compatible TTL families.

The input can be driven from either 3.3 V or 5 V devices.

This feature allows the use of this device in a mixed

3.3 V and 5 V environment.

Schmitt-trigger action at all inputs makes the circuit

tolerant for slower input rise and fall time.

The 74LVC1GU04 provides the inverting single state

unbuffered function.

QUICK REFERENCE DATA

Ground = 0 V; Tamb = 25 °C; tr = tf ≤ 2.5 ns.

SYMBOL

PARAMETER

tPHL/tPLH propagation delay A to Y

CI

input capacitance

CPD

power dissipation capacitance

CONDITIONS

VCC = 1.8 V; CL = 30 pF; RL = 1 kΩ

VCC = 2.5 V; CL = 30 pF; RL = 500 Ω

VCC = 2.7 V; CL = 50 pF; RL = 500 Ω

VCC = 3.3 V; CL = 50 pF; RL = 500 Ω

VCC = 5.0 V; CL = 50 pF; RL = 500 Ω

VCC = 3.3 V; notes 1 and 2

Notes

1. CPD is used to determine the dynamic power dissipation (PD in µW).

PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in Volts;

N = total load switching outputs;

Σ(CL × VCC2 × fo) = sum of the outputs.

2. The condition is VI = GND to VCC.

TYPICAL UNIT

1.7

ns

1.3

ns

1.7

ns

1.6

ns

1.3

ns

6

pF

14.9

pF

2004 Sep 21

2

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