NXP Semiconductors
74LVC1G58
Low-power configurable multiple function gate
Table 12. Transfer characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
−40 °C to +85 °C
Min Typ[1] Max
VH
hysteresis voltage (VT+ − VT−);
see Figure 14, Figure 15,
Figure 16 and Figure 17
VCC = 1.8 V
VCC = 2.3 V
VCC = 3.0 V
VCC = 4.5 V
VCC = 5.5 V
0.30 0.48 0.62
0.40 0.64 0.80
0.50 0.75 1.00
0.71 0.97 1.20
0.71 1.13 1.40
[1] Typical values are measured at Tamb = 25 °C.
−40 °C to +125 °C Unit
Min
Max
0.23 0.62 V
0.34 0.80 V
0.44 1.00 V
0.65 1.20 V
0.65 1.40 V
14. Waveforms transfer characteristics
VO
VT+
VI
VH
VT−
VH
VT−
VT+
Fig 14. Transfer characteristics
VI
mna207
VO
VH
VT−
VT+
VI
001aab684
Fig 16. Transfer characteristics
VO
mna208
VT+ and VT− limits are at 70 % and 20 %.
Fig 15. Definition of VT+, VT− and VH
VT+
VI
VH
VT−
VO
mnb155
VT+ and VT− limits are at 70 % and 20 %.
Fig 17. Definition of VT+, VT− and VH
74LVC1G58_4
Product data sheet
Rev. 04 — 27 April 2009
© NXP B.V. 2009. All rights reserved.
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