74LVC1G32GM 데이터 시트보기 (PDF) - NXP Semiconductors.

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74LVC1G32GM

Single 2-input OR gate

NXP Semiconductors. 

Nexperia

74LVC1G32

Single 2-input OR gate

11. Dynamic characteristics

Table 8. Dynamic characteristics

Voltages are referenced to GND (ground = 0 V); for test circuit see Fig. 9.

Symbol Parameter

Conditions

-40 °C to +85 °C

Min Typ [1] Max

tpd

propagation delay A, B to Y; see Fig. 8

[2]

VCC = 1.65 V to 1.95 V

1.0

3.1

8.0

VCC = 2.3 V to 2.7 V

0.5

2.1

5.5

VCC = 2.7 V

0.5

2.5

5.5

VCC = 3.0 V to 3.6 V

0.5

2.1

4.5

VCC = 4.5 V to 5.5 V

0.5

1.7

4.0

CPD

power dissipation VI = GND to VCC; VCC = 3.3 V [3]

-

16

-

capacitance

-40 °C to +125 °C Unit

Min

Max

1.0

10.5 ns

0.5

7.0 ns

0.5

7.0 ns

0.5

6.0 ns

0.5

5.5 ns

-

- pF

[1] Typical values are measured at Tamb = 25 °C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.

[2] tpd is the same as tPLH and tPHL.

[3] CPD is used to determine the dynamic power dissipation (PD in μW).

PD = (CPD × VCC2 × fi × N) + (CL × VCC2 × fo) where:

VCC = supply voltage in V,

fi = input frequency in MHz,

N = number of inputs switching,

CL = output load capacitance in pF,

fo = output frequency in MHz.

11.1. Waveforms and test circuit

VI

A, B input

VM

GND

VOH

t PHL

t PLH

Fig. 8.

Y output

VM

VOL

mna615

Measurement points are given in Table 9.

VOL and VOH are typical output voltage levels that occur with the output load.

The input A, B to output Y propagation delays

Table 9. Measurement points

Supply voltage

VCC

1.65 V to 1.95 V

2.3 V to 2.7 V

2.7 V

3.0 V to 3.6 V

4.5 V to 5.5 V

Input

VM

0.5 × VCC

0.5 × VCC

1.5 V

1.5 V

0.5 × VCC

Output

VM

0.5 × VCC

0.5 × VCC

1.5 V

1.5 V

0.5 × VCC

74LVC1G32

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 12 — 17 August 2018

© Nexperia B.V. 2018. All rights reserved

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