Philips Semiconductors
Single D-type flip-flop; positive-edge trigger
Product specification
74LVC1G79
DC CHARACTERISTICS
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
TEST CONDITIONS
OTHER
VCC (V)
Tamb = −40 °C to +85 °C; note 1
VIH
HIGH-level input voltage
1.65 to 1.95
2.3 to 2.7
2.7 to 3.6
4.5 to 5.5
VIL
LOW-level input voltage
1.65 to 1.95
2.3 to 2.7
2.7 to 3.6
4.5 to 5.5
VOL
LOW-level output
voltage
VI = VIH or VIL
IO = 100 µA
1.65 to 5.5
IO = 4 mA
1.65
IO = 8 mA
2.3
IO = 12 mA
2.7
IO = 24 mA
3.0
IO = 32 mA
4.5
VOH
HIGH-level output
voltage
VI = VIH or VIL
IO = −100 µA
1.65 to 5.5
IO = −4 mA
1.65
IO = −8 mA
2.3
IO = −12 mA
2.7
IO = −24 mA
3.0
IO = −32 mA
4.5
ILI
input leakage current VI = 5.5 V or GND 5.5
Ioff
power OFF leakage
VI or VO = 5.5 V 0
current
ICC
∆ICC
quiescent supply current VI = VCC or GND;
IO = 0 A
additional quiescent
VI = VCC − 0.6 V;
supply current per input IO = 0 A
pin
5.5
2.3 to 5.5
MIN.
TYP.
0.65 × VCC −
1.7
−
2.0
−
0.7 × VCC −
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
VCC − 0.1 −
1.2
−
1.9
−
2.2
−
2.3
−
3.8
−
−
±0.1
−
±0.1
−
0.1
−
5
MAX. UNIT
−
V
−
V
−
V
−
V
0.35 × VCC V
0.7
V
0.8
V
0.3 × VCC V
0.1
V
0.45
V
0.3
V
0.4
V
0.55
V
0.55
V
−
V
−
V
−
V
−
V
−
V
−
V
±5
µA
±10
µA
10
µA
500
µA
2004 Sep 10
7