P600M-T3-LF 데이터 시트보기 (PDF) - Won-Top Electronics
부품명
상세내역
제조사
P600M-T3-LF Datasheet PDF : 4 Pages
| |||
WTE
POWER SEMICONDUCTORS
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
P600A – P600M Pb
6.0A STANDARD DIODE
A
B
A
Mechanical Data
! Case: P-600, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 2.1 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
C
D
P-600
Dim
Min
Max
A
25.4
—
B
8.60
9.10
C
1.20
1.30
D
8.60
9.10
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol P600A P600B P600D P600G P600J P600K P600M Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
50
VR
RMS Reverse Voltage
VR(RMS)
35
Average Rectified Output Current
(Note 1)
@TA = 60°C
IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
rated load (JEDEC Method)
Forward Voltage
@IF = 6.0A
VFM
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C
IRM
Typical Junction Capacitance (Note 2)
Cj
100
200
400
600
800 1000
V
70
140
280
420
560
700
V
6.0
A
400
A
1.0
V
5.0
µA
1.0
mA
150
pF
Typical Thermal Resistance Junction to Ambient
(Note 1)
RJA
20
°C/W
Operating Temperature Range
Storage Temperature Range
Tj
TSTG
-50 to +150
°C
-50 to +150
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
P600A – P600M
1 of 4
© 2006 Won-Top Electronics
Share Link: 