Philips Semiconductors
Buffer with open-drain outputs
Product specification
74HC3G07; 74HCT3G07
Type 74HCT3G07
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
TEST CONDITIONS
OTHER
VCC (V)
Tamb = −40 to +85 °C
VIH
VIL
VOL
ILI
IOZ
ICC
∆ICC
HIGH-level input voltage
LOW-level input voltage
LOW-level output voltage
input leakage current
3-state output OFF current
quiescent supply current
additional supply current
per input
VI = VIH or VIL
IO = 20 µA
IO = 4.0 mA
VI = VCC or GND
VI = VIH or VIL;
VO = VCC or GND
VI = VCC or GND; IO = 0
VI = VCC − 2.1 V; IO = 0
4.5 to 5.5
4.5 to 5.5
4.5
4.5
5.5
5.5
5.5
4.5 to 5.5
Tamb = −40 to +125 °C
VIH
VIL
VOL
ILI
IOZ
ICC
∆ICC
HIGH-level input voltage
LOW-level input voltage
LOW-level output voltage
input leakage current
3-state output OFF current
quiescent supply current
additional supply current
per input
VI = VIH or VIL
IO = 20 µA
IO = 4.0 mA
VI = VCC or GND
VI = VIH or VIL;
VO = VCC or GND
VI = VCC or GND; IO = 0
VI = VCC − 2.1 V; IO = 0
4.5 to 5.5
4.5 to 5.5
4.5
4.5
5.5
5.5
5.5
4.5 to 5.5
MIN. TYP.(1) MAX. UNIT
2.0
1.6
−
V
−
1.2
0.8
V
−
0
0.1
V
−
0.15 0.33 V
−
−
±1.0 µA
−
−
±5.0 µA
−
−
10
µA
−
−
375 µA
2.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
V
0.8
V
0.1
V
0.4
V
±1.0 µA
±10 µA
20
µA
410 µA
Note
1. All typical values are measured at Tamb = 25 °C.
2003 Oct 15
7