74HC3G07DP 데이터 시트보기 (PDF) - Philips Electronics
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74HC3G07DP Datasheet PDF : 14 Pages
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Philips Semiconductors
Buffer with open-drain outputs
Product specification
74HC3G07; 74HCT3G07
DC CHARACTERISTICS
Type 74HC3G07
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
TEST CONDITIONS
OTHER
VCC (V)
MIN.
Tamb = −40 to +85 °C
VIH
HIGH-level input voltage
2.0
1.5
4.5
3.15
6.0
4.2
VIL
LOW-level input voltage
2.0
−
4.5
−
6.0
−
VOL
LOW-level output voltage VI = VIH or VIL
IO = 20 µA
2.0
−
IO = 20 µA
4.5
−
IO = 20 µA
6.0
−
IO = 4.0 mA
4.5
−
IO = 5.2 mA
6.0
−
ILI
input leakage current
VI = VCC or GND
6.0
−
IOZ
3-state output OFF current VI = VIH or VIL;
VO = VCC or GND
6.0
−
ICC
quiescent supply current VI = VCC or GND; IO = 0 6.0
−
Tamb = −40 to +125 °C
VIH
HIGH-level input voltage
2.0
1.5
4.5
3.15
6.0
4.2
VIL
LOW-level input voltage
2.0
−
4.5
−
6.0
−
VOL
LOW-level output voltage VI = VIH or VIL
IO = 20 µA
2.0
−
IO = 20 µA
4.5
−
IO = 20 µA
6.0
−
IO = 4.0 mA
4.5
−
IO = 5.2 mA
6.0
−
ILI
input leakage current
VI = VCC or GND
6.0
−
IOZ
3-state output OFF current VI = VIH or VIL;
VO = VCC or GND
6.0
−
ICC
quiescent supply current VI = VCC or GND; IO = 0 6.0
−
TYP.(1) MAX. UNIT
1.2
−
V
2.4
−
V
3.2
−
V
0.8
0.5
V
2.1
1.35 V
2.8
1.8
V
0
0.1
V
0
0.1
V
0
0.1
V
0.15 0.33 V
0.16 0.33 V
−
±1.0
µA
−
±5.0
µA
−
10
µA
−
−
V
−
−
V
−
−
V
−
0.5
V
−
1.35 V
−
1.8
V
−
0.1
V
−
0.1
V
−
0.1
V
−
0.4
V
−
0.4
V
−
±1.0
µA
−
±10
µA
−
20
µA
Note
1. All typical values are measured at Tamb = 25 °C.
2003 Oct 15
6
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