74F189 데이터 시트보기 (PDF) - Philips Electronics

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74F189

64-bit TTL bipolar RAM, inverting (3-State)

Philips Electronics 

Philips Semiconductors

64-bit TTL bipolar RAM, inverting (3-State)

Product specification

74F189A

IEC/IEEE SYMBOL

RAM 16X4

1

15

0

14

A

0

15

13

1

2

G1

3

1 EN [READ]

1 C2 [WRITE]

4

A,2D A

5

6

7

10

9

12

11

LOGIC DIAGRAM

SF00301

FUNCTION TABLE

INPUTS

OUTPUT

CE WE Dn

LHX

Qn

Complement of stored

data

LLL

High

impedance

HLH

High impedance

HXX

High impedance

NOTES:

H = High voltage level

L = Low voltage level

X = Don’t care

D0 D1 D2 D3

4 6 10 12

Data buffers

3 WE

2 CE

1

A0

15

A1

14

A2

13

A3

Decoder

Drivers

Address

Decoder

16–word x

4–bit

memory cell

array

OPERATING

MODE

Read

Write “0”

Write “1”

Disable input

VCC = Pin 16

GND = Pin 8

Output buffers

5 7 9 11

Q0 Q1 Q2 Q3

SF00302

ABSOLUTE MAXIMUM RATINGS

(Operation beyond the limit set forth in this table may impair the useful life of the device. Unless otherwise noted these limits are over the

operating free air temperature range.)

SYMBOL

PARAMETER

RATING

UNIT

VCC

VIN

IIN

VOUT

Supply voltage

Input voltage

Input current

Voltage applied to output in high output state

–0.5 to +7.0

V

–0.5 to +7.0

V

–30 to +5

mA

–0.5 to VCC

V

IOUT Current applied to output in low output state

48

mA

Tamb

Tstg

Operating free air temperature range

Storage temperature range

0 to +70

°C

–65 to +150

°C

1990 Feb 23

3

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