Philips Semiconductors
Quad 2-input NOR gate
Product specification
74ALVC02
DC CHARACTERISTICS
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL PARAMETER
TEST CONDITIONS
OTHER
VCC (V)
MIN. TYP.(1) MAX. UNIT
Tamb = −40 to +85 °C
VIH
HIGH-level input
voltage
1.65 to 1.95 0.65 × VCC −
−
V
2.3 to 2.7 1.7
−
−
V
2.7 to 3.6 2
−
−
V
VIL
LOW-level input
voltage
1.65 to 1.95 −
2.3 to 2.7 −
−
0.35 × VCC V
−
0.7
V
2.7 to 3.6 −
−
0.8
V
VOL
LOW-level output VI = VIH or VIL
voltage
IO = 100 µA
IO = 6 mA
IO = 12 mA
IO = 18 mA
IO = 12 mA
IO = 18 mA
IO = 24 mA
VOH
HIGH-level output VI = VIH or VIL
voltage
IO = −100 µA
IO = −6 mA
IO = −12 mA
IO = −18 mA
IO = −12 mA
IO = −18 mA
IO = −24 mA
ILI
input leakage
VI = 3.6 V or GND
current
1.65 to 3.6 −
1.65
−
2.3
−
2.3
−
2.7
−
3.0
−
3.0
−
−
0.2
V
0.11 0.3
V
0.17 0.4
V
0.25 0.6
V
0.16 0.4
V
0.23 0.4
V
0.30 0.55
V
1.65 to 3.6 VCC − 0.2 −
−
V
1.65
1.25
1.51 −
V
2.3
1.8
2.10 −
V
2.3
1.7
2.01 −
V
2.7
2.2
2.53 −
V
3.0
2.4
2.76 −
V
3.0
2.2
2.68 −
V
3.6
−
±0.1 ±5
µA
Ioff
power OFF leakage VI or VO = 3.6 V
current
0.0
−
±0.1 ±10
µA
ICC
quiescent supply VI = VCC or GND; IO = 0
3.6
−
current
0.2 20
µA
∆ICC
additional quiescent VI = VCC − 0.6 V; IO = 0
supply current per
input pin
3.0 to 3.6 −
5
750
µA
Note
1. All typical values are measured at Tamb = 25 °C.
2003 Jul 14
6