74AHC30D 데이터 시트보기 (PDF) - Philips Electronics

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74AHC30D

8-input NAND gate

Philips Electronics 

Philips Semiconductors

8-input NAND gate

Product specification

74AHC30; 74AHCT30

RECOMMENDED OPERATING CONDITIONS

SYMBOL

PARAMETER

VCC

VI

VO

Tamb

DC supply voltage

input voltage

output voltage

operating ambient

temperature

tr,tf (∆t/∆f) input rise and fall rates

CONDITIONS

74AHC

74AHCT

UNIT

MIN. TYP. MAX. MIN. TYP. MAX.

2.0 5.0 5.5 4.5 5.0 5.5 V

0

−

5.5 0

−

5.5 V

0

−

VCC 0

−

VCC V

see DC and AC

−40 +25 +85 −40 +25 +85 °C

characteristics per device −40 +25 +125 −40 +25 +125 °C

VCC = 3.3 ±0.3 V

−

−

100 −

−

−

ns/V

VCC = 5 ±0.5 V

−

−

20 −

−

20

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).

SYMBOL

PARAMETER

VCC

DC supply voltage

VI

input voltage

IIK

DC input diode current

IOK

DC output diode current

IO

DC output source or sink current

ICC

DC VCC or GND current

Tstg

storage temperature

PD

power dissipation per package

CONDITIONS

VI < −0.5 V; note 1

VO < −0.5 V or VO > VCC + 0.5 V; note 1

−0.5 V < VO < VCC + 0.5 V

for temperature range from

−40 to +125 °C; note 2

MIN.

−0.5

−0.5

−

−

−

−

−65

−

MAX.

+7.0

+7.0

−20

±20

±25

±75

+150

500

UNIT

V

V

mA

mA

mA

mA

°C

mW

Notes

1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

2. For SO-packages: above 70 °C the value of PD derates linearly with 8 mW/K.

For TSSOP-packages: above 60 °C the value of PD derates linearly with 5.5 mW/K.

1999 Nov 30

5

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