74AC10MTR 데이터 시트보기 (PDF) - STMicroelectronics

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74AC10MTR

TRIPLE 3-INPUT NAND GATE

STMicroelectronics 

74AC10

CAPACITIVE CHARACTERISTICS

Test Condition

Value

Symbol

Parameter

VCC

(V)

TA = 25°C

-40 to 85°C -55 to 125°C Unit

Min. Typ. Max. Min. Max. Min. Max.

CIN Input Capacitance 5.0

4.5

pF

CPD Power Dissipation 5.0

Capacitance

fIN = 10MHz

33

pF

(note 1)

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/3 (per gate)

TEST CIRCUIT

CL

RRLT

=

=

=

50pF or equivalent (includes jig and probe

RZO1 U=T5o0f0pΩuloser

equivalent

generator

(typically

50Ω)

capacitance)

WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)

4/8

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