3N65G-TM3-R(2011) 데이터 시트보기 (PDF) - Unisonic Technologies
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3N65G-TM3-R Datasheet PDF : 8 Pages
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3N65
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
VDSS
VGSS
IAR
ID
IDM
EAS
EAR
dv/dt
650
V
±30
V
3.0
A
3.0
A
12
A
200
mJ
7.5
mJ
4.5
V/ns
TO-220
75
Power Dissipation
TO-220F/TO-220F1
PD
34
W
TO-251/TO-252
50
Junction Temperature
TJ
+150
℃
Operating Temperature
TOPR
-55 ~ +150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 64mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤ 3.0A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220/TO-220F/TO-220F1
TO-251/TO-252
TO-220
Junction to Case
TO-220F/TO-220F1
TO-251/TO-252
SYMBOL
θJA
θJC
RATING
62.5
110
1.67
3.68
2.5
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-590.B
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