2SK3377 데이터 시트보기 (PDF) - KEXIN Industrial

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2SK3377

MOS Field Effect Transistor

KEXIN Industrial 

SMD Type

MOSFICET

MOS Field Effect Transistor

2SK3377

Features

Low on-resistance

RDS(on)1 = 44 m MAX. (VGS = 10 V, ID = 10 A)

RDS(on)2 = 78 m MAX. (VGS = 4.0 V, ID = 10 A)

Low Ciss : Ciss = 760 pF TYP.

Built-in gate protection diode

TO-252

6.50+0.15

-0.15

5.30+0.2

-0.2

2.30+0.1

-0.1

0.50+0.8

-0.7

0.80+0.1

-0.1

0.127

max

2.3

4.60+0.15

-0.15

0.60+0.1

-0.1

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Drain current

Power dissipation TC=25

TA=25

Channel temperature

Storage temperature

* PW 10 s,Duty Cycle 1%

Symbol

Rating

Unit

VDSS

60

V

VGSS

20

V

ID

20

A

Idp *

50

A

30

PD

W

1.0

Tch

150

Tstg

-55 to +150

Unit: mm

1 Gate

2 Drain

3 Source

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gat cutoff voltage

Forward transfer admittance

Drain to source on-state resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Symbol

IDSS

IGSS

VGS(off)

Yfs

RDS(on)1

RDS(on)2

Ciss

Coss

Crss

ton

tr

toff

tf

QG

QGS

QGD

Testconditons

Min Typ Max Unit

VDS=60V,VGS=0

10

A

VGS= 20V,VDS=0

10

A

VDS=10V,ID=1mA

1.5 2.0 2.5 V

VDS=10V,ID=10A

5 10

S

VGS=10V,ID=10A

35 44 m

VGS=4.0V,ID=10A

54 78 m

760

pF

VDS=10V,VGS=0,f=1MHZ

150

pF

71

pF

13

ns

170

ns

ID=10A,VGS(on)=10V,RG=10 ,VDD=30V

43

ns

34

ns

17

nC

ID =20 A, VDD = 48 V, VGS = 10 V

3.0

nC

4.7

nC

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