
RDS (ON) – Tc
1.0
Common source
VGS = 10 V
0.8
Pulse test
6
ID = 13 A
0.6
3
0.4
0.2
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
2SK3403
100
Common source
Tc = 25°C
Pulse test
10
IDR – VDS
1
10
3
5
1
VGS = 0, −1 V
0.1
0
−0.2 −0.4 −0.6 −0.8
−1
−1.2
Drain-source voltage VDS (V)
10000
1000
Capacitance – VDS
Ciss
100
Coss
Common
10 source
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1
1
Crss
10
100
Drain-source voltage VDS (V)
1000
Vth – Tc
6
Common source
VDS = 10 V
5
ID = 1 mA
Pulse test
4
3
2
1
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
PD – Tc
200
160
120
80
40
0
0
40
80
120
160
200
Case temperature Tc (°C)
Dynamic input/output characteristics
500
Common source 20
ID = 13 A
Tc = 25°C
400
Pulse test
16
VDS
300
200
VDD = 90 V
12
180
360
VGS
8
100
4
0
0
0
10
20
30
40
50
Total gate charge Qg (nC)
4
2010-04-13