2SK3310 데이터 시트보기 (PDF) - Toshiba
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2SK3310 Datasheet PDF : 6 Pages
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2.0
Common source
VGS = 10 V
Pulse test
1.6
RDS (ON) – Tc
1.2
ID = 10 A
0.8
5
2.5
0.4
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
Capacitance – VDS
3000
1000
Ciss
300
100
Coss
30 Common source
VGS = 0 V
10 f = 1 MHz
Tc = 25°C
3
0.1
0.3 1
3
Crss
10
30
100 300
Drain-source voltage VDS (V)
2SK3310
100
Common source
Tc = 25°C
Pulse test
10
IDR – VDS
1
10
0.1
0.01
0
5
1
3
VGS = 0, −1 V
−0.2 −0.4 −0.6 −0.8
−1
−1.2
Drain-source voltage VDS (V)
Vth – Tc
6
Common source
VDS = 10 V
5
ID = 1 mA
Pulse test
4
3
2
1
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
PD – Tc
50
40
30
20
10
0
0
40
80
120
160
200
Case temperature Tc (°C)
Dynamic input/output characteristics
500
20
Common source
ID = 10 A
400
Tc = 25°C
16
VDD = 90 V
Pulse test
VDS
300
12
180
360
200
8
VGS
100
4
0
0
0
10
20
30
40
50
Total gate charge Qg (nC)
4
2009-09-29
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