K2869 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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K2869

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown V(BR)DSS

60

voltage

Gate to source breakdown

V(BR)GSS

±20

voltage

Gate to source leak current IGSS

—

Zero gate voltege drain

I DSS

—

current

Gate to source cutoff voltage VGS(off)

1.5

Static drain to source on state RDS(on)

—

resistance

RDS(on)

—

Forward transfer admittance |yfs|

10

Input capacitance

Ciss

—

Output capacitance

Coss

—

Reverse transfer capacitance Crss

—

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note: 1. Pulse test

Typ

Max Unit

—

—

V

—

—

V

—

±10

µA

—

10

µA

—

2.5

V

0.033 0.045 Ω

0.055 0.07 Ω

16

—

S

740

—

pF

380

—

pF

140

—

pF

10

—

ns

110

—

ns

105

—

ns

120

—

ns

1.0

—

V

40

—

V

2SK2869

Test Conditions

ID = 10mA, VGS = 0

IG = ±100µA, VDS = 0

VGS = ±16V, VDS = 0

VDS = 60 V, VGS = 0

ID = 1mA, VDS = 10V

ID = 10A, VGS = 10V*1

ID = 10A, VGS = 4V*1

ID = 10A, VDS = 10V*1

VDS = 10V

VGS = 0

f = 1MHz

ID = 10A, VGS = 10V

RL = 3Ω

IF = 20A, VGS = 0

IF = 20A, VGS = 0

diF/ dt = 50A/µs

3

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