2SK2796 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

부품명

상세내역

제조사

2SK2796

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK2796(L), 2SK2796(S)

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Avalanche current

Avalanche energy

Channel dissipation

VDSS

VGSS

ID

I Note1

D(pulse)

I DR

I Note3

AP

E Note3

AR

Pch Note2

Channel temperature

Tch

Storage temperature

Tstg

Note:

1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Ratings

Unit

60

V

±20

V

5

A

20

A

5

A

5

A

2.14

mJ

20

W

150

°C

–55 to +150

°C

2

Share Link: