
RDS (ON) – Tc
200
Common source
Pulse test
160
ID = 18 A
9
120
4.5
80
40
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
2SK2882
IDR – VDS
100
Common source
50 Tc = 25°C
Pulse test
30
10
10
5
3
35
1
VGS = 0, −1 V
1
0
−0.4
−0.8
−1.2
−1.6
Drain-source voltage VDS (V)
5000
3000
1000
500
300
Capacitance – VDS
Ciss
Coss
100
50
Common source
30 VGS = 0 V
f = 1 MHz
Tc = 25°C
10
0.1
0.3 0.5 1
Crss
3 5 10
30 50 100
Drain-source voltage VDS (V)
Vth – Tc
4
Common source
VDS = 10 V
ID = 1 mA
Pulse test
3
2
1
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
PD – Tc
60
40
20
0
0
40
80
120
160
Case temperature Tc (°C)
Dynamic Input/Output Characteristics
160
40
Common source
ID = 18 A
Tc = 25°C
Pulse test
120
30
VDS
80
40
20
30
60
VDD = 120 V
10
VGS
0
0
0
20
40
60
Total gate charge Qg (nC)
4
2006-11-20