2SK2882 데이터 시트보기 (PDF) - Toshiba
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2SK2882 Datasheet PDF : 6 Pages
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2SK2882
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
⎪Yfs⎪
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 150 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 9 A
VGS = 10 V, ID = 9 A
VDS = 10 V, ID = 9 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
⎯
⎯
±10
μA
⎯
⎯
100
μA
150 ⎯
⎯
V
0.8
⎯
2.0
V
⎯ 0.09 0.18
Ω
⎯ 0.08 0.12
10
17
⎯
S
⎯ 1380 ⎯
pF
⎯ 200 ⎯
pF
⎯ 610 ⎯
pF
tr
10 V
VGS
ton
0V
tf
⎯
12
⎯
ID = 9 A
VOUT
⎯
24
⎯
ns
VDD ∼− 100 V
⎯
56
⎯
toff
Duty <= 1%, tw = 10 μs
⎯ 130 ⎯
Qg
VDD ∼− 120 V, VGS = 10 V, ID = 18 A
Qgs
Qgd
⎯
57
⎯
nC
⎯
43
⎯
nC
⎯
14
⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = 18 A, VGS = 0 V
IDR = 18 A, VGS = 0 V
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯
⎯
18
A
⎯
⎯
54
A
⎯
⎯
−1.7
V
⎯ 185 ⎯
ns
⎯
1.3
⎯
μC
Marking
K2882
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-20
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