2SD837 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD837 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD837
DESCRIPTION
·High DC Current Gain-
: hFE= 1000(Min.)@IC= 3A
·High Switching Speed
APPLICATIONS
·Audio power amplifiers
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Base Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
8
A
40
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn
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