2SD826 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD826 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD826
DESCRIPTION
·
·With TO-126 package
·Low collector saturation voltage
·High DC current gain
·Large current capacity
APPLICATIONS
·For 3V, 6V strobe applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
固IN电C半H导AN体GE SEMICONDUTOR Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
VALUE
60
20
6
UNIT
V
V
V
IC
Collector current
5
A
ICM
Collector current-peak
t=100ms
8
A
Ta=25℃
PC
Collector power dissipation
TC=25℃
1.0
W
10
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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