2SD5075T 데이터 시트보기 (PDF) - SavantIC Semiconductor
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2SD5075T Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD5075T
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.8A
VBEsat
Base-emitter saturation voltage
IC=2.5A;IB=0.8A
IEBO
Emitter cut-off current
VEB=5V; IC=0
ICBO
Collector cut-off current
VCB=800V; IE=0
hFE
DC current gain
fT
Transition frequency
tf
Fall time
IC=1.5 A ; VCE=5V
IC=0.5 A ; VCE=10V
IC=3A;IB1=0.8A;IB2=-1.6A
VCC=200V;RL=66.7=
MIN TYP. MAX UNIT
8.0
V
1.5
V
1.0
mA
10
µA
8
3
MHz
0.4
µs
2
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