2SD2604 데이터 시트보기 (PDF) - Toshiba

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2SD2604

Silicon NPN Triple Diffused Type (Darlington) Transistor

Toshiba 

Electrical Characteristics (Tc = 25°C)

Characteristics

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Symbol

Test Condition

ICBO

IEBO

V (BR) CEO

hFE (1)

hFE (2)

VCE (sat)

VBE (sat)

VCB = 90 V, IE = 0

VEB = 6 V, IC = 0

IC = 10 mA, IB = 0

VCE = 3 V, IC = 2 A

VCE = 3 V, IC = 5 A

IC = 2 A, IB = 4 mA

IC = 2 A, IB = 4 mA

2SD2604

Min Typ. Max Unit

―

―

100

μA

0.75 ―

3.0

μA

95 110 125

V

2000 ― 15000

1000 ―

―

―

0.9

1.5

V

―

1.5

2.5

V

Turn-on time

Switching time Storage time

Fall time

ton

Input IB1

tstg

20 μs

IB2

Output

―

0.5

―

―

5.0

―

μs

VCC ≈ 40 V

tf

IB1 = −IB2 = 4 mA, duty cycle ≤ 1%

―

0.7

―

Marking

D2604

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2

2006-11-21

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