2SD2263 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SD2263

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SD2263

1,000

DC Current Transfer Ratio vs.

Collector Current

300

100

30

VCE = 2 V

10

1 3 10 30 100 300 1,000

Collector Current IC (mA)

Typical Characteristics of

Emitter to Collector Diode

0.5

0.4

0.3

0.2

0.1

0

0.4 0.8 1.2 1.6 2.0

Emitter to Collector Forward Voltage

VECF (V)

Saturation Voltage vs. Collector Current

10

3

1

VBE (sat)

0.3

0.1

0.03

0.01

1

VCE (sat)

lC = 10 lB

3 10 30 100 300 1,000

Collector Current IC (mA)

1,000

300

Gain Bandwidth Product vs.

Collector Current

VCE = 2 V

100

30

10

1 3 10 30 100 300 1,000

Collector Current IC (mA)

4

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