2SD1897 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD1897 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1897
DESCRIPTION
·With TO-220Fa package
·Low collector saturation voltage
·High power dissipation:PC=30W@TC=25℃
APPLICATIONS
·For low frequency power amplifier,power
driver and DC-DC converter applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
·
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-Peak
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
Ta=25℃
VALUE
100
100
5
5
10
30
2
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
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